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词汇
electron beam accessed memory
释义
electron beam accessed memory
一种用电子束进行读/写的存储器。在写操作时,根据输入是1还是0决定电子束是否沉积电子。在读操作时,则是检测电子束在有电荷区或无电荷区的效应。
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更新时间:2025/3/25 7:08:06