| 释义 |
Bridg·man 英ˈbrɪdʒmən美ˈbrɪdʒmənAHDbrĭjʹmən
基本例句
布里奇曼¹⁰⁰
MnxCd1-xIn2Te4 ingots were grown byBridgmanmethod.本文首次采用Bridgman法生长了Mn_xCd_In_2Te_4晶体，并研究了晶体中相的形貌、结构、成分和晶体中各组元沿轴向和径向的成分分布。
Cd 0 9 Mn 0 1 Te crystals were grown by bothBridgmanand ACRT|B methods.采用Bridgman法和ACRT B法生长了两根Cd0 9Mn0 1Te晶锭 。
Sb doped PbWO 4 crystals have been grown by means of modifiedBridgmanmethod.采用改进的布里奇曼法生长了掺杂Sb2 O3的PbWO4 晶体。
TheBridgmanmethod is widely used in the growth of single crystals.许多单晶半导体材料的垂直生长都使用了Bridgman法.
Bridgmanmethod for tetragonal system was investigated by numerical simulation.本文对四方晶系晶体的Bridgman法生长进行了稳态数值模拟。 |