| 释义 |
SiNWs
基本例句
硅纳米线¹⁰⁰
On the other hand, utilizing Rapid Thermal Processing system,SiNWswere prepared on the same substrates as above.另外，通过1150℃和1200℃下30s的快速热处理，在镀金硅衬底上生长出SiNWs。
In high temperature deposition area, highly curved and tangledSiNWs, whose growth mechanism is the VLS mechanism, have been obtained.However, in lower temperat…在低温沉积区,高度定向生长的直硅纳米线,规整地排列在硅衬底表面,其生长机制是氧化辅助生长机制。
Keywords thermal evaporation;SiNWs;VLS mechanism;OG mechanism;热蒸发;硅纳米线;气-液-固机制;氧化辅助生长机制;
Silicon Nanowires硅纳米线SiNWs |