| 释义 |
SIMOX
基本例句
注氧隔离¹⁰⁰
Based on theSIMOXSOI wafer,the SOI structure pressure gauge chip was designed,and the gauge chips were manufactured with MEMS techniques.在SIMOX技术 SOI 晶圆的基础上,设计了压力敏感芯片结构,并基于 MEMS 工艺制作了芯片。
Abstract Total-dose irradiation effect of partially-depleted NMOS transistors with gate-all-around and H-gate structures fabricated on modifiedSIMOXwas studied.摘要 研究了在改性注氧隔离SIMOX材料上制备的具有环栅和H型栅结构的部分耗尽NMOS晶体管在三种不同偏置状态的总剂量辐照效应。
Therefore the existing measurement te chniques and interface parameter extraction methods for the MOS capac itor can be directly applied to an SIS capacitor.SIMOXSOI wafers produced by ion implant processes we re used in this experiment.传统的MOS电容结构测试电学特性应用到SOI圆片是有其局限性的,在本实验中直接利用SOI圆片的SIS结构,将SOI圆片的无损电学表征方法应用到实际的表征当中去。
Effect of Two Step Annealing on Formation ofSIMOXStructure两步退火对SIMOX结构形成的影响
Behavior of Residual Oxygen in Top Si Layer ofSIMOXStudied by PL and SIMSSIMOX材料顶层硅膜中残余氧的行为
Improvement of the Radiation Hardness ofSIMOXBuried Oxides by Silicon Ion Implantation采用硅离子注入改进SIMOX埋氧的抗总剂量辐射性能研究 |