| 释义 |
silicides 英'sɪlɪkaɪdz美'sɪlɪkaɪdz COCA³¹⁵¹¹¹⁺⁴
基本英英例句
硅化物¹⁰⁰原型silicide的复数
名词 silicide:
any of various compounds of silicon with a more electropositive element or radical The characteristics of RE silicides and the progress in preparation of RE silicides are summarized, and their applications in devices are introduced.
本文综述了稀土硅化物的特性、制备技术及其进展。介绍了稀土金属硅化物在器件方面的应用。 cnki
The good properties of Y silicides were synthesized by using metal Y ion implantation with large ion flux and annealing.
用大束流密度的钇金属离子注入硅，能够直接合成性能良好的薄层硅化物。 cnki
The measurement approaches and characterization on properties, defects and thermal stability of the silicides were discussed.
讨论了上述金属硅化物的性能评价与缺陷，热稳定性的检测方法。 rm-journal
The structure of synthetic silicides has been investigated with the analysis of channeled low angle emergence and TEM.
用掠角沟道技术和透射电子显微镜分析了这种硅化物的结构。 cnki
The silicides in the cuticle of wheat straw stem were studied by means of XPS- peak-differenating analysis.
进行麦秆皮层硅化物的 XPS测定及分峰拟合分析。 dictall
In this paper, The properties and formation methods of refractory metal silicides are described along with related VLSI processing technology. The application of them in VLSI is discussed.
本文详细综述了耐熔金属硅化物的性质、形成方法、工艺技术以及在 VLSI中的应用，并对其前景进行了展望。 cnki
The investigated anode materials include modified carbons, nitrides, silicides, oxides and novel alloys.
研究的负极材料主要有：改性碳材料、氮化物、硅化物、氧化物和新型合金。 iciba
The deformation behaviour and oxidation properties of the silicides were studied for ultra high temperature applications;
研究其高温形变特征和氧化膜形成规律； keyanjijin
The formation of silicides from the reaction between deposited thin metal films and Si substrates has wide application in the semiconductor industry.
因此在硅基底上形成金属硅化物薄膜也被广泛应用于半导体工业。 cnki
The growth techniques, the barrier states and the interfaces for rare earth silicides were thoroughly described.
阐述了稀土金属硅化物的生长工艺和与硅衬底间势垒及界面特性。 rm-journal
Silicides are widely used as the contacts for the source, drain and gate in CMOS devices, which are also the key materials for nano scaled integrated circuits.
金属硅化物广泛用于微电子器件中的源、漏、栅极与金属电极间的接触，是制备纳米集成电路的关键材料之一。 rm-journal
Niobium and niobium silicides due to their good mechanical properties, have high potential for being the high- temperature materials as a substitute for nickel alloys.
铌及铌硅化合物具有优良的力学性能，可替代现有的镍基合金超高温材料。 dictall |