| 释义 |
sil·i·cide 英ˈsɪlɪˌsaɪd美ˈsɪlɪˌsaɪdAHDsĭlʹĭ-sīd' COCA²⁸⁰¹³⁶⁺⁵
基本英英搭配记法例句例句
n.硅化物¹⁰⁰复数silicides
Noun:
any of various compounds of silicon with a more electropositive element or radicalchromium silicide硅化铬chromic silicide化 硅化铬copper silicide一硅化二铜calcium silicide硅化钙barium silicide硅化钡
sil-ic…的-ide化合物⇒n.硅化物
名词100%
用作名词Preliminary results have beenobtained for the early stages ofsilicideformation on metal surfaces.综合应用二者对金属硅化物形成的研究已取得初步成果。 Auger chemical shiftACS of several compounds of silicide and metal oxide was studied using scanning Auger microprobe in this paper.
对几种硅化物及金属氧化物的俄歇化学位移作了实验研究。 chemyq
Carbene and silylene are two kinds of reactive activity intermediates which belong to carbide and silicide separately, but they are quite similar.
碳烯和硅烯是分属于碳化物和硅化物中的两类反应活性中间体。两者甚为相似。 cnki
The Titanium silicide film has its potential advantage in forming a gate electrode and interconnection for VLSI because of its low resistivity and some other good characteristics.
硅化钛薄膜由于电阻率低和其它一些良好特性，在 VLSI的栅电极和互连线中显示出它潜在的优势。 cnki
In this paper, the titanium silicide films processed by PECVD method have been studied.
本文研究了用 PECVD法制备硅化钛膜的卫艺。 cnki
The results show that the properties of the titanium silicide films formed in our work strongly rely on the deposition condition.
结果表明：所形成硅化钛膜的性质强烈地依赖于淀积工艺条件。 cnki
The conditions of forming tungsten silicide with As ion beam mixing have been studied by means of Rutherford backscattering.
本工作用卢瑟福背散射研究了离子束混合方法形成硅化钨的条件。 cnki
The precipitation of silicide may promote the intensity of slip and is the minor reason for the ductility loss.
而硅化物析出协同促进位错滑移集中化，是热稳定性下降的次要因素。 doi
The prominent influence of substrate temperature and coating overlayer to prevent from oxidation on roughness, uniformity, and quality of silicide thin film is also discussed.
镀膜时的衬底温度和防止氧化的保护层对硅化物薄膜的质量，平整度，均匀性等都有明显的影响。 cnki
The silicide layer formed at interface was thought to induce the in plane magnetic anisotropy in the sandwiches, which consequently resulted in the high field sensitivity of GMR.
这个硅化物界面层诱导了三明治膜的平面内磁各向异性，从而导致了易轴上高灵敏度巨磁电阻效应。 cnki
This article describes the process and equipment of silicide in sub- micron process.
文章对亚微米自对准硅化物制造设备及工艺进行了详细的描述。 cnki
This paper describes the fabrication of tantalum silicide layers by ion-beam mixing and rapid thermal annealing.
本文描述用离子束透过钽金属膜进行混合和快速热处理方法来形成钽的硅化物。 cnki
And by the means of silicide, resist layer and aluminium multilayer metal lines, the questions of ohmic- contact and A1 electron mobility are resolved.
采用硅化物阻挡层和 A1多层金属布线方法，解决了欧姆接触和铝的电迁移问题。 cnki |