| 释义 |
nmosBNC²³⁶²¹³⁺¹
基本例句
n 沟道金属氧化物半导体
A depleted NMOS transistor, which was used as current source, and a negative feedback loop constitute a stable voltage reference.
该电路采用耗尽型 NMOS管作电流源器件，结合负反馈，实现了稳定的电压基准。 cnki
At the same time, to prevent the generation of latch-up, guard rings are added around the large dimension digital output inverter PMOS and NMOS transistors of the circuits.
同时，为了防止闩锁效应的产生，在电路的大尺寸数字输出反相器的PMOS管和 NMOS管的周围增加了保护环。 fabiao
Here a circuit with simple structure is introduced, it can realize the high voltage transfer function effectively, only two NMOS were used to realize the high voltage transfer control by logic signal.
集成电路设计中，用逻辑电平控制高压信号传输的情况很多，而传统的高压传输控制电路的结构过于复杂，版图面积较大且受工艺限制。 dictall
The high precision resistor is composed of three NMOS FETs with controllable gate voltage and aspect ratios.
通过控制各 MOS 管的栅电压和宽长比可得到线形度较好的高精度电阻器。 cnki
The substrate- triggered technique has an obvious improve on ESD level of the large- dimension NMOS devices.
衬底触发技术可以大幅度提高大尺寸 NMOS器件的 ESD级别。 dictall
The values of the lateral and vertical distribution conductivities for electrons and holes in the substrate of nMOS are given.
计算在 MOS管衬底区域的纵向和横向分布电子电导和空穴电导，发现电子电导与阳极电流具有相似的负阻特性。 cnki
A regular NMOS-only M-2M ladder and a current-to- voltage conversion circuit proposed in this paper are adopted in this design.
设计中，采用了一种规则的全 NMOS管构成的 M-2M梯形电路，以及本文提出的电流-电压转换电路。 cnki
A spectral data acquisition system is designed based on NMOS linear image sensor and micro controller unit MCU technology.
基于 NMOS线性图像传感器和单片机 MCU技术设计了一个光谱信号采集系统。 opticsjournal
Based on the SWB environment, the design for manufacturing and optimization of the nano-level NMOS integrated chips were implemented.
基于 SWB环境实现了 nm级 NMOS集成化管芯的可制造性设计及优化。 dictall
Based on simulation, the characteristics and mechanisms of failure on a deep sub- micron grounded-gate NMOS GGNMOS are studied under TLP transmission line pulse stress.
对 TLP传输线脉冲应力下深亚微米 GGNMOS器件的特性和失效机理进行了仿真研究。 dictall
Chapter 3 presents simulation results of the special devices of BCD technology with Medici and the study of extended drain power NMOS fabricated with Conventional CMOS technology;
第三章对芯片中的特殊元器件进行了仿真分析，并且完成了在 CMOS工艺下的延伸漏极 NMOS功率管研究； iciba
Devices model including: NMOS FET, Resister, Capacitance, Inductor. Device model is analyzed deeply according to the RF Spice file of SMIC.
器件等效模型分析是根据 SMIC的射频工艺库，对 NMOS管、金属螺旋电感、电容、电阻进行了研究。 fabiao
For example, the hole mobility in PMOS and the electron mobility in NMOS can be significantly enhanced by introducing appropriate compressive and tensile channel stresses, respectively.
例如，通过在沟道中引入适当的压应力和张应力能分别提高 PMOS的空穴迁移率和 NMOS的电子迁移率。 boshuo
In order to improve the speed of the comparator, add a diode connected NMOS in the circuit;
为了提高比较器的速度，专门在电路中跨接了一个二极管连接的 NMOS管； com
Integrated circuit. NMOS, asynchronous communications interface adapter.
集成电路。 NMOS管，异步通信接口适配器。 datasheetpdf
On the basis of the multiple- valued switch-level algebra, this paper proposes a logic design automation algorithm for NMOS and CMOS combinational circuits.
本文在多值开关级代数理论的基础上，提出了适合于 NMOS及 CMOS组合电路的逻辑设计自动化算法。 dictall
Secondly, according to the small size effect of the nanometer NMOS, the NMOS's structure is designed.
其次，针对纳米器件的各种效应，提出了设计纳米 NMOS器件的结构设计方案； fabiao
Through inductor optimization, the VCO has a low phase noise and a wide tuning range with switched capacitor array and NMOS varactor.
通过优化集成电感的设计，同时采用 NMOS管和开关电容阵列作为可变电容，使该设计具有较低的相位噪声和较宽的调谐范围。 dictall
Total- dose irradiation effect of partially- depleted NMOS transistors with gate-all-around and H- gate structures fabricated on modified SIMOX was studied.
研究了在改性注氧隔离 SIMOX材料上制备的具有环栅和 H型栅结构的部分耗尽 NMOS晶体管在三种不同偏置状态的总剂量辐照效应。 dictall
Two power amplifier output stage using PMOS and NMOS transistors by the special design.
两个功率放大器的输出级均采用 PMOS和 NMOS晶体管特殊设计而 成。 docin
Using compatible NMOS- DYL multiple- valued logic circuits as basic units, this paper proposes a user-oriented Semi- Custom Multiple- valued logic Array Integrate Circuit SCMAIC.
本文采用 NMOS- DYL兼容的多值逻辑电路为基本单元，提出一种面向用户的半定制多值逻辑阵列集成电路简称SCMAIC。 cnki |