| 释义 |
MQWs
基本例句
多量子阱¹⁰⁰
Because of the lower electron mobility in the miniband, the photocurrent of SL is relatively lower than that ofMQWs.虽然超晶格结构适合操作在低偏压下，超晶格的光电流相较之下还是比量子井结构的要低。
We find that the photocurrent of this device is not reduced by the additionalMQWsbut the dark current is.我们发现超晶格所产生的光电流并没有因为量子井结构而降低，但暗电流却有减少。
InGaAs/GaAs acting as the active region of MQW SEED to gain 980nm work wavelergth has been introduced.采用 In Ga As/ Ga As作为多量子阱SEED器件的有源区 ;从而获得了 980 nm工作波长 .
The net stress is a driving force of misfit dislocation multiplication and is a very important factor for strainedMQWsstability.净应力是失配位错增殖的驱动力，是应变多量子阱稳定的重要判据。 |