| 释义 |
MosfetsCOCA¹⁵⁶⁰⁹⁷BNC¹¹⁴⁰²⁴⁺⁵
基本例句
计金属氧化物半导体场效应晶体管原型mosfet的三单 A refinement of an analytical approximation of the surface potential in MOSFETs is proposed by introducing a high-order term.
通过在表面势公式中增加一高阶近似项，大大提高了传统表面势的解析近似精度。 cnki
A rectangular wave generating circuit has been designed with MOSFETs, half bridge driver chip LM27222 and gate drive transformer.
利用MOS管、半桥驱动芯片 LM27222、栅极驱动变压器等器件，设计了变极性矩形波发生电路。 dictall
A solid state high frequency induction heating power supply using power MOSFETs is studied.
本文研究了使用功率 MOSFET的固态高频感应加热电源。 fabiao
Based on analysis of the principle of substrate current of MOSFETs, a new hot carriers resistant structure of CMOS digital circuits is proposed.
本文在分析 MOSFET衬底电流原理的基础上，提出了一种新型抗热载流子退化效应的 CMOS数字电路结构。 cnki
In this paper, the characteristics of high frequency lateral power MOSFETs, currently an important device for high voltage and power ICs, is reviewed.
高频横向功率 MOSFET是目前用于高压集成、功率集成的重要器件。 cnki
Moreover, according to the basic flux linkage equations of brushless DC motor, the operating mode of the three-phase square-wave motor with wye-connected phase windings and two mosfets is analyzed.
从直流无刷电机基本的磁链方程入手，分析了两相导通三相六状态星形方波直流无刷电机的运行模式。 cnki
The divide- by-2 function is performed by injecting a signal to the gate of direct injection MOSFETs across the active LC resonator.
藉由直接在横跨于主动 LC共振腔的金氧半场效电晶体的闸极端注入讯号，我们可以得到除二的功能。140.118.33.11
The experimental results by pulse method confirm that the negative dynamic resistance of the power VD- MOSFETs originates mainly from self- heating in the region measured.
用脉冲法测试，通过分析对比证实，在测量范围内，引起这种动态负阻的根源主要是自加热效应。 cnki
The lead shorting devices protect the MOSFETs from charge buildup and the subsequent catastrophic discharge current.
牵头负责短路保护装置的建设和随后的灾难性放电电流的 MOSFET。 iask.edu.sina.com.cn
The noise mainly comes from the thermal noise of resistors and the flicker noise of MOSFETs.
接收机中的噪声主要是电路中电阻的热噪声和 MOS器件的闪烁噪声。 cnki
The numerical results of micrometer and submicrometer MOSFETs show that the present model fits experiment very well.
对微米和亚微米 MOSFET样品的模拟结果表明，本文所提出的模型和方法与实验符合得很好。 cnki
We test the shot noise by this testing system for short- channel MOSFETs and the diodes testing, and the results are satisfying.
应用本测试系统测试短沟道 MOSFET和二极管散粒噪声，得到了较好的测试结果。 fabiao
A prototype of high frequency induction heating power is developed by multi device parallel connection and using power MOSFETs as the power switch.
以功率 MO SFET为开关元件，采用多管并联方式研制出高频感应加热电源。 chemyq
Bipolar- junction transistors Q1 and Q3 meet cost considerations, but you could also use MOSFETs for slightly better performance.
双极结合晶体管 Q1和 Q3满足成本考虑，但也可以用 MOSFET获得稍好的性能。 autooo
DSOI, bulk Si and SOI MOSFETs are fabricated on the same die successfully using local oxygen implantation process.
通过局域注氧工艺，在同一管芯上制作了 DSOI、体硅和 SOI三种结构的器件。 cnki
For high power system, every switch of three-phase inverter is actually made up of four MOSFETs in Parallel.
考虑到系统功率较大，三相桥式功率变换器的每个开关器件均采用四个 MOS管并联的结构。 cnki
For this reason, you should not use digital MOSFETs.
出于这个原因，不应该使用数字 MOSFET。 yheda.com
In order to reduce the short channel effects of short channel MOSFETs, measures like improving devices structure, changing channel doping concentration and reducing gate oxide thickness is proposed.
为了减小小尺寸 MOS器件的短沟道效应，采取了改进器件的结构、改变沟道掺杂以及减小栅氧化层厚度等措施。 fabiao
In this paper, we present a circuit simulation algorithm based on the partial differential equation PDE model of MOSFETs, together with a fast algorithm for solving the PDE.
研究了基于 MOSFET偏微分方程 PDE模型的电路仿真算法，并提出一种求解 PDE的快速算法。 cnki
Low-voltage low-power design relates to silicon chip manufacture technology, MOSFETs modeling, and circuits design strategies.
低压低功耗设计技术涉及到工艺技术、 MOSFET建模技术和电路设计技术等。 fabiao
The experimental and analytical results demonstrate that wide bandwidth, high voltage output and long- time stability can be achieved with power MOSFETs and a closed- loop scheme.
实验与分析表明，高压直流放大器采用功率场效应管和电压闭环控制后，可拓展放大器通频带，提高放大器输出能力和长时间稳定性。 cnki
The SG3525A type PWM control main circuit of the full- bridge power MosFETS converter were discussed;
叙述了由 SG3525A型 PWM控制的全桥功率场效应管变换器的主电路； cnki
The drive circuit of power MOSFETs is simplified and the stabilization of the controller is enhanced attributed to the drive capability of this chip.
由于芯片自带功率 MOS管驱动能力，简化驱动电路设计的同时提高了控制器的可靠性。 cnki
The equivalent input noise voltage of MOSFETs as a function of frequency, bias, geometry etc. is measured. Experimental results agree well with theory prediction.
对 MOSFET的等效输入噪声电压的频率特性、偏置特性和几何特性等进行了实验测试，结果表明与理论规律符合良好。 cnki
The impact of gate- leakage current on device characteristic becomes obvious with the continuous scaling of MOSFETs.
随着 MOSFET尺寸的不断减小，栅漏电流对器件特性的影响日益明显。 dictall
The work done will give much help in the choice of switching frequency, gate drive voltage V g son and single transistor operation or multi transistor parallel connection of power MOSFETs.
该文的工作对同步整流器中开关频率、栅极驱动电压、单管或多管并联运行方式的选择具有实际指导意义。 cnki
Then people begin to study how to maintain performances of long channel devices when the characteristic dimension of MOSFETs reduced.
于是人们开始研究如何在 MOS器件尺寸缩小的同时，仍然继续保持长沟道器件的良好特性。 fabiao
This paper introduces the experimental results of two snubber circuits for the full bridge switch circuit constituted by MOSFETs in case of the inductive load and large current operation.
介绍由 MOSFET管构成的全桥开关电路在感性负载下大电流工作时两种吸收回路的实验研究结果。 dictall
To prevent the control disturbance in the process of MOSFETs on-offs, Optoisolator circuit has been used to realize the isolation of the driving circuit and the control circuit.
为防止功率管开关过程中对控制电路造成干扰，采用光电隔离的方法实现驱动电路和控制电路的隔离。 cnki
Various power devices are compared with each other. Power MOSFETs are employed as the switches of the power supply.
分析对比了各种常用电力电子器件选择了功率 MOSFET作为逆变器开关元件。 fabiao |