| 释义 |
MOSFET 'mɔsfet COCA¹⁴⁷²⁶¹BNC⁸²⁵³⁰⁺¹⁰
基本例句
abbr.金属氧化物半导体场效应晶体管=metal-oxide-semiconductor field-effect transistor
An efficient, self- consistent method of Monte Carlo and Poisson equation is used to simulate the electrical characteristic of deep submicron metal- oxide- semiconductor field effect Transistor MOSFET.
用蒙特卡罗-泊松方程自洽求解的方法，对深亚微米金属-氧化物-半导体场效应晶体管—— MOSFET的电特性进行了模拟。 dictall
An example which uses the simulator to analysis the statistical relation of threshold voltage of MOSFET to channel implanted dose is presented.
并用此程序分析了 MOS场效应管阈值电压与沟道注人剂量的统计关系。 iciba
In the end, to lower the power loss on MOSFET, another optimizing principle based on the selection of superior load curve of MOSFET was proposed.
最后为了降低功率管的能耗，提出了根据最优的功率管负载曲线设计变压器变比的优化方案。 airiti.com
The electron radiation experiment for MOSFET's is done with general linear accelerator and the simple method to predict the device lifetime by the electron radiation experiment is given.
此外，还利用普通； 挣山加速器进行了 MOSFET的电子辐射实验，并提出了运用电子辐射实验预测器件寿命的方法。 cnki
The fundamental principles of the bulk-driven MOSFET and mixer are discussed.
讨论分析了混频器和衬底驱动 MOSFET的工作原理。 dictall
The hot carrier effectsHCE in MOSFET are studied in this paper. Based on MOSFET lifetime model of direct current, we present MOSFET lifetime model of dynamic stress.
研究了 MOS器件中的热载流子效应，在分析了静态应力下 MOSFET寿命模型的基础上，提出了动态应力条件下 MOSFET的寿命模型。 cnki
The linear and saturate portion of MOSFET static state behavior is also included.
而 MOSFET的静态线性区和饱和区的特性也用于表示阳极电压。 cnki
The main factors affecting the stability of the threshold voltage of the MOSFET and some known experimental results of accelerated testing of P- channel MOSFET are described in this paper.
本文阐述了引起 MOS场效应晶体管阈值电压不稳定性的几种主要因素，介绍国外对 p沟 MOS晶体管所做的加速试验的结果。 cnki
The new research of MOSFET- gate dielectric was summarized.
本文综述了 MOSFET栅介质的最新研究状况。 cnki
The structure of a vertical multiple- gate MOSFET based on bipolar technology is presented.
提出了一种基于双极工艺的纵向多面栅 MOSFET的结构和工艺。 cnki
The MOSFET input diode is controlled by an electric field in the gate region, thus the input impedance is always extremely high because there is no forward biased diode to lower the input impedance.
MOSFET的输入二极管是由一个电场控制在门区，因此总是输入阻抗非常高，因为没有正向偏置二极管，以降低输入阻抗。 iask.edu.sina.com.cn
A new method for testing the load current and realizing the current limited control through testing the saturable voltage drop of MOSFET is introduced.
介绍了一种通过检测场效应功率晶体管饱和压降来检测负载电流，实现限流控制的新方法。 cnki
Advanced peak detector automatic cutoff with MOSFET and linear current charges battery to100% without overcharging.
高级峰值检测器自动以切断功率管输出和线性电流保证电池能被100%充满而不会导致过冲。 iciba
An automatic extraction system of MOSFET model parameters is introduced in this paper.
研制成一种由计算机自动提取 MOS场效应管直流模型参数的系统。 iciba
As the size of the basic device MOSFET approaches its ultimate limit, a series of nano-electronic devices based on different physical mechanisms have been proposed for future generations.
今天，当微电子的基本器件 MOSFET缩小接近其终极时，作为下一代的基础，一批基于新的物理效应的纳电子器件又被提了出来。 cnki
But the fabrication of self aligned double gate MOSFET is too complicated.
但是目前自对准的双栅 MOSFET的工艺制作相当困难。 cnki
In this chip, the Magnetic sensor cell is implemented with a novel sector split drain MOSFET transistor sector MAGFET, which can directly transfer magnetic signal into current output signal.
在芯片中的磁敏传感器单元采用扇形分裂漏 MOSFET磁敏晶体管扇形 MAGFET，直接将磁信号转化为电流信号输出。 cnki
Introduce the principle of MOSFET AC square wave inverter power source.
介绍了 MOSFET交流方波逆变电源的工作原理。 cnki
Skilled with MOSFET device engineering, especially in its reliability and performance aspects.
具有 MOSFET元件工程技能，其中，尤其著重于可靠度及高效能方面。 iciba
The gate is electrically isolated from the source, and while this provides the MOSFET with its high input impedance, it also forms a good capacitor.
门是电气隔离，从源头上，虽然这提供了具有高输入阻抗的 MOSFET，它也形成了良好的电容。 iask.edu.sina.com.cn
The latter includes: push-pull inverter, PWM control circuit, MOSFET drives circuit, overflow of current protecting circuit, which supply the drive voltage needed by ultrasonic motor.
后者，由推挽式逆变主电路、 PWM控制电路、 MOSFET驱动电路、过流保护电路几部分组成，提供了电动机起振必需的驱动电压。 cnki
The device size can be greatly shrunk with effectively suppressing short channel effect and parasitic bipolar effect in conventional MOSFET.
这种结构器件能有效降低困扰常规 MOSFET的短沟效应和寄生的双极效应，能大幅度减小器件尺寸。 cnki
The metal oxide semiconductor field effect transistor MOSFET works on a similar principle, but the diode is buried within the MOSFET.
在金属氧化物半导体场效应晶体管 MOSFET的作品在一个类似的原则，但二极管的 MOSFET内掩埋。 iask.edu.sina.com.cn
This thesis pays more attention to the drive circuit of high frequency power MOSFET, power regulation circuit and frequency- tracing circuit.
本文主要研究高频功率 MOSFET的驱动电路、频率跟踪电路以及功率调节电路。 cnki
This circuit has both characters of restricting the current within the giving value and limiting the switching frequency of MOSFET operating on current limited condition.
该电路具有既能将负载电流限制在设定值以内，又能控制限流工作时功率管的开关频率等特点。 cnki
Through solving a set of device equations, we simulate and then analyze the basic characteristics of NANO MOSFET.
利用一组基本器件方程式，我们模拟并分析了 NANO MOSFET的基本特性。 cnki
Various MOSFET tests require making low current measurements. Some of these tests include gate leakage, leakage current vs. temperature, substrate to- drain leakage, and sub- threshold current.
各种 MOSFET测试都要求进行弱电流的测量。这些测试包括栅极漏电、泄漏电流与温度的关系、衬底对漏极的漏电和亚阈区电流等。 eefocus
We found that as temperature drops, absolute value of MOSFET threshold voltage increases, absolute value of threshold voltage temperature gradient decreases and transconductance increases steeply.
发现，随温度的降低， MOSFET的阈电压的大小上升，阈电压的温度梯度的大小减小，跨导的大小急剧上升。 cnki |