| 释义 |
MOS device
基本例句
金属-氧化物-半导体器件
This thesis reports an analysis of DC and AC behavior of dual-material double-gate fully-depleted silicon on insulatorMOS device.摘要:本论文中提出双材料双闸完全解离绝缘体上矽金氧半元件在直流与交流的分析。
As compared with the MS structured device, theMOS deviceexhibits more perfect interface, because the oxide layer can effectively prevent the interdiffusion of Pd and GaAs.研究结果显示，降低无电镀镀浴之组成：如整体镀浴浓度、前驱盐浓度、还原剂浓度等变因，均将使钯膜粒径减小，分布均匀。而所得元件之二极体电性愈佳。
In chapter 1, we make an introduction for Fin-FET and describe its evolution from conventionalMOS deviceand propose a structure called Tri-Gate Fin-FET device.第一章主要是针对鳍状场效电晶体元件做一个简介，说明鳍状场效电晶体元件如何从传统的金氧半元件演化而来，并提出一个三闸鳍状场效电晶体元件。 |