| 释义 |
IMPATT
基本例句
n.碰撞雪崩渡越时间二极管¹⁰⁰
The peak power output of pulsedIMPATTsource of 3.2W at 1% duty cycle is achieved at 30.52GHz, frequency chirp during the bias pulse is less than 800MHz.振荡源在30.;52GHz的频率上;脉冲峰值功率为3
The corresponding curves are given here. With these results in mind, 3-mm band P+NN+IMPATTand 8-mm band P+PNN+ DDR avalanche devices have been designed and developed resulting in excellent performence.已利用这些结果设计和研制成3mm P~+NN~+崩越二极管和8mmP~+PNN~+双漂移崩越二极管;获得了良好性能.
Analysis of Transit Angle of DDRIMPATTDiode双漂移崩越二极管的渡越角分析
Thermal Resistance Measurement ofIMPATTDiodesIMPATT二极管热阻测试
J-BAND SILICON DDRIMPATTDEVICEJ波段硅DDRIMPATT器件
LARGE-SIGNAL ANALYSIS OFIMPATTDEVI CESIMPATT器件的大信号分析 |