| 释义 |
IGFETBNC⁹⁷²³³⁺⁷
基本例句
n.绝缘栅场效应晶体管¹⁰⁰
Based on the basic structure ofIGFET, the authors use new standpoints and methods to analyze the working principle, the breakdown position and the breakdown reason of the transistor.从场效应管的基本结构出发,用新观点、新方法说明其基本工作原理,击穿的位置,击穿的原因。
Other applications of the coating process and the improved barrier-layer are field-effect-transistors FET, insulated-gate-field-effect-transistorsIGFET, and charge-coupled-devices CCD.该涂覆工艺与改良的势垒层的其他应用奥扩场效应晶体管FET、绝缘栅场效应晶体管IGFET与电荷耦合器件。 |