| 释义 |
HVPE
基本例句
=High Voltage Paper Electrophoresis 高电压纸电泳
Recent advances in heteroepitaxial growth of high quality GaN films by MOCVD andHVPEis reviewed.介绍了采用MOCVD或HVPE技术高质量异质外延生长GaN薄膜的发展状况。
The reason is not made clear yet, but these results suggest thatHVPEgrowth or an MN high temperature buffer layer gives a better quality GaN.目前，其原因尚不清楚，但是这些结果表明采用HVPE生长方法或用一高温AlN阻挡层可以得到高质量的GaN。
Structural properties of epitaxially laterally overgrown GaN on patterned GaN “substrates” by hydride vapor phase epitaxy have been investigated.研究了在刻有图形的GaN“衬底”上用HVPE方法侧向外延生长 GaN的结构特性。
At present the prevailing epitaxial growth techniques of GaN are Metalorganic Chemical Vapor Deposition , Molecule Beam Epitaxy as well asHVPE.目前GaN的外延生长技术一般采用有机金属化学气相外延法，在蓝宝石衬底的面上外延生长GaN材料，另外还有分子束外延技术及卤化物汽相外延技术等。
MOCVD, MBE andHVPEhave become dominating techniques to grow GaN materials. Among these methods, MOCVD is the most important and widely used by researchers.目前，金属有机气相沉积、分子束外延和氢化物气相外延等方法已经成为制备GaN的主流工艺，其中MOCVD使用的最为广泛。 |