| 释义 |
HgCdTe
基本例句
碲镉汞¹⁰⁰
The Plasma Properties of Laser ablatedHgCdTe;.引用该论文 满宝元;王象泰;官文栎.
Sticking Coefficient of As in molecular beam epitaxy ofHgCdTe;.As在HgCdTe分子束外延中的表面粘附系数.;红外与毫米波学报);
Effect ofHgCdTeComposition Ununiformity on Its X-Ray Reflectivities;.引用该论文 王庆学;杨建荣;魏彦锋;方维政;陈新强;何力.
CdTe filmHgCdTeinfrared focal plane array device surface passivation ZnS.标 签 CdTe薄膜HgCdTe红外焦平面 器件表面钝化 ZnS.
Growth and defects characterization ofHgCdTefilm grown by LPE method;.引用该论文 魏彦锋;陈新强;曹妩媚.
It is described that a novel non dispersive infrared CO gas monitor withHgCdTedetector and double beam.本文介绍了一种新型便携式红外 CO气体分析仪。 |