| 释义 |
hceBNC²³⁶²¹³⁺¹
基本例句
Human Caused Error 人为误差
The hot carrier effects HCE in MOSFET are studied in this paper. Based on MOSFET lifetime model of direct current, we present MOSFET lifetime model of dynamic stress.
研究了 MOS器件中的热载流子效应，在分析了静态应力下 MOSFET寿命模型的基础上，提出了动态应力条件下 MOSFET的寿命模型。 cnki
Amber HCE- relay. Miniature relay for wide applications.4 form C. Coil voltage6 V AC. Light emitting diode wired, plug-in. Bifurcated contact type.
琥珀行政总监中继。微型继电器广泛的应用。4表三线圈电压6伏交流电。发光二极管有线，插件。岔接触式。 datasheetpdf |