| 释义 |
GaAs MESFET
基本例句
砷化镓
The devices include CMOS/Si, CMOS/SOS,CPU,GaAs MESFET,MIMIC,VHSIC and CCD.涉及的器件包括：CMOS/体硅电路，CMOS/SOS电路，GaAsMESFET及其电路，电荷耦合器件等。
The behaviour of infrared rapid thermal annealing ofGaAs MESFETactive layer and n+ layer formed by Si+ implantation is studied.本文研究了GaAs MESFET有源层和n~+层Si~+注入的红外快速退火行为。
The fabrication and reliability of ohmic contact on n type GaAs and fai lure analysis ofGaAs MESFETbased on ohmic contact degradation are reported in this paper.报道了n型GaAs上欧姆接触的制备及其可靠性，以及基于欧姆接触退化的GaAsMES－FET的失效分析。
It was confirmed that the optimum volume ratio of 50% citric acid solution to 30% H2O2 is 1.5 : 1.The LT GaAs cap layer ofGaAs MESFETwas etched off with the 50% citric acid/H2O2 solution, and the AlAs spacer layer with hydrochloric acid.分析了选择腐蚀机理;确定了腐蚀工艺中50%柠檬酸:H_2O_2=1.;5:1的最佳腐蚀液配比方案。
A p-buriedGaAs MESFEThas been fabricated by means of im-planting Be into semi-insulating GaAs substrates to form a p-type buried layer under the chan-nel active layer.本文采用在半绝缘GaAs衬底中离子注入Be;于沟道有源层下引入P型埋层技术;制成P埋层GaAs MESPET.
The principles of commonly used types of DAC are analyzed. A monolithic integrated 4 bitGaAs MESFETD/A circuit is designed and fabricated using GaAs VHSIC technology being used now.在详细分析了几种常用类型D/A转换电路工作原理的基础上,结合现有GaAs VHSIC的制作工艺条件,设计并制作了一种4位单片集成GaAs MESFETD/A转换电路。 |