| 释义 |
ep·i·tax·y 英ˈepɪˌtæksiː美ˈɛpɪˌtæksiAHDĕpʹĭ-tăk'sē 高COCA¹⁰²⁶¹⁴BNC¹⁷³⁹⁹⁵⁺²
基本英英记法派生词例句例句
n.物外延;晶体取向附生³³;晶体取向接长⁶⁷名词复数epitaxies
Noun:
growing a crystal layer of one mineral on the crystal base of another mineral in such a manner that its crystalline orientation is the same as that of the substrateepi-在…上-taxy⇒n.物外延;晶体取向附生³³;晶体取向接长⁶⁷Phomoepitaxy均相外延Phomepitaxy同外延等外延
名词100%
用作名词The higher value is comparable to those obtained in CVDepitaxy.这个高的数值可以和从化学气相淀积外延得到的数值相比拟。
The impurity concentration profile depends onepitaxygrowth velocity, growth time and impurity diffusion coefficient.如果杂质的扩散系数很小，杂质在外延层中的深度分布是均匀的。 A brief review is given to the present status and prospect for atomic layer epitaxy ALE technique.
综述了原子层外延 ALE技术的现状及其发展趋势。 cnki
All the procedure for epitaxy growth was controlled by a computer.
外延生长工艺过程由计算机控制。 cnki
Finally, some reference criteria for the quality inspection of epitaxy chip materials are given.
最后给出了几个外延晶片材料质量评估的参照标准。 cnki
Some double crystal rocking curves of photocathode epitaxy materials and substrates are measured by means of X-ray double crystal diffraction in the bonding process.
用 X射线双晶衍射仪测量了阴极和玻璃热粘结工艺过程中阴极材料外延层和衬底的双晶回摆曲线。 cnki
The interval between the interferentialpeaks is also inversely proportional tO the epitaxy layer thickness.
外延层的干涉小峰间距反比于外延层的厚度。 cnki
The tool and humanity of Chinese all determine Chinese and life coexist, the epitaxy of Chinese study and epitaxy of social life are equal.
语文的工具性和人文性都决定语文与生活同在，语文学习的外延与社会生活的外延是相等的。 fabiao
Chemical beam epitaxy CBE, a novel technique for thin- film crystal growth, is introduced.
本文介绍了薄膜晶体生长的最新技术——化学束外延 CBE。 cnki
Described is a method of purifying a quartz processing vessel used in the production of semiconductors and more particularly for epitaxy from the gaseous phase.
描述的是一个净化石英加工船用于外延在半导体生产和更特别是从气相方法。1168818
High quality GaN film was grown by hydride vapor phase epitaxyHVPE using porous AAO as mask.
采用均匀的多孔阳极氧化铝做掩膜在氢化物气相外延设备中生长出高质量的氮化镓膜。 cnki
In this paper is reported the design and the settlement of an experimental simulation system of molecular beam epitaxy applied to physics researches.
本文报道了一台用于物理研究的分子束外延模拟实验装置的设计和调试。 cnki
In this paper, an experimental apparatus for the low pressure epitaxy of silane is described.
本文介绍了硅烷低压外延的实验装置。 cnki
Melt epitaxy have creative growth technology, which is distinct from the normal crystal growth method, such as liquid phase epitaxy etc.
熔体外延具有创新的生长工艺，不同于液相外延等常规的晶体生长方法。 cnki
Modified MBE techniques ate presented such as migration- enhanced epitaxy MEE, interval growth and temperature switch.
介绍了迁移增强外延 MEE、间隔生长和温度开关等改进的 MBE技术。 cnki
Molecular- beam epitaxy and dynamic growth with long-range space and temporal correlations are analysed using scaling analysis approach.
用直接标度分析方法研究了分子束外延生长和在长程时间、空间关联条件下的动力生长过程。 cnki
Since molecular beam epitaxy technique appeared, the research of semiconductor physics has gained many amazing break throughs.
自从分子束外延生长技术出现以来，半导体物理的研究获得许多惊人的突破。 cnki
The results have shown that the doping profile of the low pressure epitaxy of silane is steeper than those of silane epitaxy and silicon tetrachloride epitaxy at atmosphere pressure.
结果表明，与硅烷常压外延和四氯化硅常压外延相比，硅烷低压外延的杂质分布更为陡峭。 cnki
The results show that the effect of the parasitic PNP, transistor; . is so serious under the condition of thin epitaxy that it can not be neglected even if the technology of doping gold is used.
结果指出，在薄外延条件下，寄生 PNP效应严重，即使采用掺金工艺，寄生 PNP效应也不能忽略不计。 cnki
The inventive method is advantageous in that it no longer comprises expensive epitaxy and insulation processes.
此方法的优点在于不再需要昂贵的外延和隔离过程。 gongye168
The design and technical points of a molecular beam epitaxy apparatus with metal- organic source were described.
本文报道了金属有机源分子束外延设备的设计方案和技术特点。 cnki
The thick SOI films were prepared by SIMOX technology and Si epitaxy process.
利用 SIMOX技术和硅外延工艺制备了厚膜 SOI材料。 cnki
To satisfy the requirement for high performance infrared detector, a selective epitaxy Schottky barrier diode of SiGe was realized based on high quality silicon device.
为了满足高性能的红外探测要求，以高品质硅基器件研制了选择性外延锗硅肖特基二极管。 dictall
Ultra pure hydrogen>6N is a process gas necessary for silicon epitaxy in semiconductor industry.
超纯氢气大于6N是半导体硅外延等工艺必备的工艺气体。 cnki
Using a new kind of liquid-phase epitaxy technology, V- channeled substrate inner stripe visible GaAlAs semiconductor laser with a large optical cavity is fabricated.
采用一种新的液相外延工艺，研制出了具有大光胶结构的 V型槽衬底内条形可见光发射半导体激光器。 cnki
Epitaxy process;
外延工艺； chemyq |