| 释义 |
doped ZnO
基本例句
掺杂ZnO
Dietl et al. predicted that p type Mndoped ZnOcould have ferromagnetism at room temperature.Dietl等人的理论计算预测，p型掺杂O可能具有室温铁磁性。
Gas sensing property of the film was investigated at different concentration of CO gases and results show that 0.5% Al3+doped ZnOthin film shows a maximum sensitivity to CO gas. The gas sensitivity mechanism of ZnO is also discussed.在室温下;对薄膜在不同浓度的CO气体下的敏感特性进行了研究;随着气体浓度的增加;薄膜电阻值逐渐减小; 随着掺Al量的增大;气敏灵敏性先逐渐增大后减小;发现当铝含量为r=0.;5%时;对CO气体的灵敏度最大;并对紫外光照射下气敏半导体薄膜的气敏机理进行了简单分析。Doping Cr2O3 increase resistivity of ATO Doping ZnO reduce resistivity of ATO. After doping three oxide the transparency of ATO film is all reduced. Effect of oxide on transparency of ATO films followed the sequence Cr2O3> Fe2O3> ZnO. 结果表明;Cr2O3增大ATO纳米粉末晶粒尺寸;对ATO粉体电阻率急剧增加;搀杂ZnO增加ATO纳米粉末晶粒尺寸;但降低ATO粉末的电阻率;搀杂Fe2O3能大大减少ATO纳米粉末晶粒长大;当Fe2O3搀杂量超过一定值时使电阻率急剧上升;3种氧化物均降低ATO薄膜的透射率;其程度为Cr2O3>Fe2O3>ZnO. |